From c82f81bc913fc6ed948e3289d7adce839a539a5f Mon Sep 17 00:00:00 2001 From: Sadeep Madurange Date: Sat, 27 Dec 2025 12:14:19 +0800 Subject: MOSFET post. --- _site/feed.xml | 2 +- _site/index.html | 2 +- _site/log/index.html | 2 +- _site/log/mosfet-switches/index.html | 134 ++++++++++++++--------------------- _site/posts.xml | 2 +- 5 files changed, 57 insertions(+), 85 deletions(-) (limited to '_site') diff --git a/_site/feed.xml b/_site/feed.xml index 77029b1..1447d49 100644 --- a/_site/feed.xml +++ b/_site/feed.xml @@ -1 +1 @@ -Jekyll2025-12-27T11:18:53+08:00/feed.xmlASCIIMX | LogW. D. Sadeep MadurangeMatrix Rain: 2025 refactor2025-12-21T00:00:00+08:002025-12-21T00:00:00+08:00/log/matrix-digital-rainW. D. Sadeep MadurangeFingerprint door lock (LP)2025-08-18T00:00:00+08:002025-08-18T00:00:00+08:00/log/fpm-door-lock-lpW. D. Sadeep MadurangeOn the use of MOSFETs as electronic switches2025-06-22T00:00:00+08:002025-06-22T00:00:00+08:00/log/mosfet-switchesW. D. Sadeep MadurangeHow to configure ATmega328P microcontrollers to run at 3.3V and 5V2025-06-10T00:00:00+08:002025-06-10T00:00:00+08:00/log/arduino-unoW. D. Sadeep MadurangeFingerprint door lock (RF)2025-06-05T00:00:00+08:002025-06-05T00:00:00+08:00/log/fpm-door-lock-rfW. D. Sadeep MadurangeBumblebee: browser automation2025-04-02T00:00:00+08:002025-04-02T00:00:00+08:00/log/bumblebeeW. D. Sadeep MadurangeHow to set up ATSAM3X8E microcontrollers for bare-metal programming in C2024-09-16T00:00:00+08:002024-09-16T00:00:00+08:00/log/arduino-dueW. D. Sadeep MadurangeEtlas: e-paper dashboard2024-09-05T00:00:00+08:002024-09-05T00:00:00+08:00/log/etlasW. D. Sadeep MadurangeExperimental e-reader2023-10-24T00:00:00+08:002023-10-24T00:00:00+08:00/log/e-readerW. D. Sadeep MadurangeNeo4J A* search2018-03-06T00:00:00+08:002018-03-06T00:00:00+08:00/log/neo4j-a-star-searchW. D. Sadeep Madurange \ No newline at end of file +Jekyll2025-12-27T12:19:17+08:00/feed.xmlASCIIMX | LogW. D. Sadeep MadurangeMatrix Rain: 2025 refactor2025-12-21T00:00:00+08:002025-12-21T00:00:00+08:00/log/matrix-digital-rainW. D. Sadeep MadurangeFingerprint door lock (LP)2025-08-18T00:00:00+08:002025-08-18T00:00:00+08:00/log/fpm-door-lock-lpW. D. Sadeep MadurangeHigh-side MOSFET switching2025-06-22T00:00:00+08:002025-06-22T00:00:00+08:00/log/mosfet-switchesW. D. Sadeep MadurangeHow to configure ATmega328P microcontrollers to run at 3.3V and 5V2025-06-10T00:00:00+08:002025-06-10T00:00:00+08:00/log/arduino-unoW. D. Sadeep MadurangeFingerprint door lock (RF)2025-06-05T00:00:00+08:002025-06-05T00:00:00+08:00/log/fpm-door-lock-rfW. D. Sadeep MadurangeBumblebee: browser automation2025-04-02T00:00:00+08:002025-04-02T00:00:00+08:00/log/bumblebeeW. D. Sadeep MadurangeHow to set up ATSAM3X8E microcontrollers for bare-metal programming in C2024-09-16T00:00:00+08:002024-09-16T00:00:00+08:00/log/arduino-dueW. D. Sadeep MadurangeEtlas: e-paper dashboard2024-09-05T00:00:00+08:002024-09-05T00:00:00+08:00/log/etlasW. D. Sadeep MadurangeExperimental e-reader2023-10-24T00:00:00+08:002023-10-24T00:00:00+08:00/log/e-readerW. D. Sadeep MadurangeNeo4J A* search2018-03-06T00:00:00+08:002018-03-06T00:00:00+08:00/log/neo4j-a-star-searchW. D. Sadeep Madurange \ No newline at end of file diff --git a/_site/index.html b/_site/index.html index 2498bda..682339b 100644 --- a/_site/index.html +++ b/_site/index.html @@ -82,7 +82,7 @@ - On the use of MOSFETs as electronic switches + High-side MOSFET switching diff --git a/_site/log/index.html b/_site/log/index.html index b7ebcc5..659609d 100644 --- a/_site/log/index.html +++ b/_site/log/index.html @@ -72,7 +72,7 @@ - On the use of MOSFETs as electronic switches + High-side MOSFET switching diff --git a/_site/log/mosfet-switches/index.html b/_site/log/mosfet-switches/index.html index 3b8f83b..97bba07 100644 --- a/_site/log/mosfet-switches/index.html +++ b/_site/log/mosfet-switches/index.html @@ -2,12 +2,12 @@ - On the use of MOSFETs as electronic switches + High-side MOSFET switching - On the use of MOSFETs as electronic switches + High-side MOSFET switching @@ -41,104 +41,76 @@
-

ON THE USE OF MOSFETS AS ELECTRONIC SWITCHES

+

HIGH-SIDE MOSFET SWITCHING

22 JUNE 2025

-

Recently, I needed a low-power circuit for one of my battery-operated projects. -Much of the system’s power savings depended on its ability to electronically -switch off components, such as servos, that draw high levels of quiescent -currents. My search for a solution led me to MOSFETs, transistors capable of -controlling circuits operating at voltages far above their own.

- -

Acknowledgments

- -

This article is a summary of what I learnt about using MOSFETs as switches. -I’m not an electronics engineer, and this is not an authoritative guide. The -circuits in this post must be considered within the narrow context in which -I’ve used them. All credits for the schematics belong to Simon Fitch.

- -

Preamble

- -

For a typical MOSFET-based switch, we can connect a GPIO pin of a -microcontroller to the gate of a logic-level N-channel MOSFET placed on the low -side of the load and tie the gate and the drain pins of the MOSFET with a -pull-down resistor. This would work as long as the power supplies of the -microcontroller and the load don’t share a common ground. Things become more -complicated when they do (e.g., controlling power to a component driven by the -same microcontroller).

- -

In that scenario, the source potential visible to the load is the difference -between the gate and the threshold potentials of the MOSFET. For example, when -the gate and the threshold potentials are 3.3 V and 1.5 V, the potential the -load sees is 1.8 V. So, to use a low-side N-channel MOSFET, we need the gate -potential to be higher than the source potential, which may not always be -practical. The alternative would be a hide-side switch.

+

Needed low-power switching for the fingerprint door +lock. Servo and FPM draw high quiescent current–had to +cut power electronically during sleep. MOSFETs can do this.

-

P-channel high-side switch

+

Schematics belong to Simon Fitch.

+ +

Problem with simple low-side switching

+ +

Typical approach: GPIO → gate of N-channel MOSFET on low side, pull-down +resistor between gate and drain. Works if MCU and load don’t share common +ground. Doesn’t work when they do (like controlling a component powered by the +same MCU).

-

The following schematic shows how a high-side P-channel MOSFET (M1) could -switch power to a 6 V servo driven by a 3.3 V MCU.

+

Issue: source potential = gate potential - threshold voltage. Example: 3.3V +gate - 1.5V threshold → 1.8V at load–not nearly enough for a servo. Raising +the gate potential above source is not always practical. Solution: high-side +switch.

+ +

P-channel high-side switch

P-channel high-side switching circuit

-

When the microcontroller outputs low, the M2 N-channel MOSFET stops conducting. -The R1 resistor pulls the gate of the M1 P-channel MOSFET up to +6 V, switching -the servo off. When the microcontroller outputs high on the GPIO pin, M2’s -source-drain connection starts conducting, causing M1’s gate potential to drop -to 0 V, which switches on power to the servo.

+

M1 is P-channel (high-side), M2 is N-channel (level converter). MCU output low +→ M2 off → R1 pulls M1 gate to +6V → servo off. MCU output high → M2 conducts → +M1 gate drops to 0V → servo on.

-

N-channel high-side switch

+

Note: IRF9540 in the schematic doesn’t work. VGS (-10V) for +RDSon too much for 3.3V ATmega328P to drive. NDP6020P is the only +suitable through-hole MOSFET I could find.

-

The P-channel high-side switch would be the typical architecture for our use -case. However, if we have access to a potential high enough to safely raise the -gate potential above the threshold such that their difference outputs the source -potential required to drive the load, we can switch on the high side using an -N-channel MOSFET:

+

N-channel high-side switch

N-channel high-side switching circuit

-

In the schematic, both M1 and M2 are N-channel MOSFETs. When the -microcontroller output is low, M2 stops conducting. This causes the M1’s gate -potential to rise above the threshold, turning the servo on. Conversely, a high -output on the GPIO line switches M2 on, which lowers M1’s gate potential. This -switches the servo off. The R2 pull-up resistor prevents the high impedance of -the output pins at power-up from switching the servo on.

+

Less common but works if you have voltage high enough to drive the gate. Both +M1 and M2 are N-channel. MCU low → M2 off → M1 gate rises above threshold → +servo on. MCU high → M2 on → M1 gate drops → servo off. R2 prevents +high-impedance power-up from switching servo on.

-

Both topologies require M2 to act as a level converter between circuits -containing the microcontroller and the servo, converting between 0 V and +6 V -or +9 V. M2 is a low-power signal converter carrying less than a milliamp of -current. The gate-source threshold voltage of M2 must be lower than the MCU’s -supply voltage. 2N7000, 2N7002, and BSS138 are popular choices for M2.

+

M2 needed in both topologies for level conversion (0V ↔ +6V or +9V). Carries +<1mA. Gate-source threshold must be lower than MCU supply. Common choices: +2N7000, 2N7002, BSS138.

-

The D1 flyback diodes used in the two topologies safeguard the MOSFET from -voltage spikes caused by inductive loads such as servos.

+

Note: D1 flyback diodes protect MOSFETs from voltage spikes caused by inductive +loads (servos, relays).

A BJT alternative

-

A Bipolar Junction Transistor (BJT) is a simpler, cheaper, and more widely -available type of transistor that can be used as a switch.

-

BJT architecture

-

In the schematic, when the MCU outputs high, Q2 starts conducting. Q2 amplifies -Q1’s base current. Unlike MOSFETs, which are voltage-driven, BJTs are driven by -base current. Resistors R3 and R4 must be chosen carefully to output the -desired base currents. “How to choose a -transistor as a switch” is an excellent guide on using BJTs as electronic -switches.

+

Simpler, cheaper, more available. Q2 conducts when MCU outputs high. Q2 +amplifies Q1’s base current. Unlike MOSFETs (voltage-driven), BJTs are +current-driven. R3 and R4 must be calculated for desired base currents. Guide on BJT +switches.

+ +

Which topology?

-

Which topology to choose?

+

MOSFETs preferred in professional work—more efficient when on. Harder to drive +at 3.3V due to VGS requirements for full saturation (low +RDS(on)).

-

The professional community appears to prefer MOSFETs over BJTs. MOSFETs are -more efficient when the switch is on. However, they are more challenging to -drive, especially with a 3.3 V MCU, due to the VGS potentials -required to achieve specified RDS(on) values (i.e., to turn them on -fully).

+

N-channel: Lower on-resistance, cheaper, more efficient than P-channel. Harder +to drive high-side (gate must be above source—requires extra circuitry like +MOSFET drivers).

-

N-channel MOSFETs have lower on-resistance values, making them more efficient -than P-channel ones. They are also cheaper. However, they are harder to drive -on the high side as their gate potential must be higher than the source -potential. This often requires extra circuitry such as MOSFET drivers.

+

Used P-channel high-side for the door lock redesign. Simpler to drive from 3.3V +MCU, no driver needed.

Further reading

@@ -147,11 +119,11 @@ potential. This often requires extra circuitry such as MOSFET drivers.

topologies
  • How to read MOSFET datasheets
    • -
  • How to use a +
  • How to use a transistor as a switch
    • -
  • Guide to +
  • Guide to selecting and controlling a MOSFET for 3.3 VDC logic applications
    • -
  • Driving a large +
  • Driving a large relay from a 3.3 VDC microcontroller using an NPN Darlington transistor
    • diff --git a/_site/posts.xml b/_site/posts.xml index 03fec7a..05ccd8a 100644 --- a/_site/posts.xml +++ b/_site/posts.xml @@ -1 +1 @@ -Jekyll2025-12-27T11:18:53+08:00/posts.xmlASCIIMXW. D. Sadeep Madurange \ No newline at end of file +Jekyll2025-12-27T12:19:17+08:00/posts.xmlASCIIMXW. D. Sadeep Madurange \ No newline at end of file -- cgit v1.2.3